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| APTGT200H60G Full - Bridge Trench + Field Stop IGBT(R) Power Module VBUS Q1 G1 Q3 G3 VCES = 600V IC = 200A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant E1 OUT1 OUT2 E3 Q2 G2 Q4 G4 E2 E4 0/VBUS OUT1 G1 E1 VBUS 0/VBUS G2 E2 E3 G3 OUT2 E4 G4 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 150C V W Reverse Bias Safe Operating Area 400A @ 550V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGT200H60G - Rev 1 June, 2006 Max ratings 600 290 200 400 20 625 Unit V A APTGT200H60G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 200A Tj = 150C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 400 Unit A V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 200A R G = 2 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 200A R G = 2 Tj = 25C VGE = 15V Tj = 150C VBus = 300V IC = 200A Tj = 25C R G = 2 Tj = 150C Min Typ 12.3 0.8 0.4 115 45 225 55 130 50 300 70 1 1.8 5.7 7 Max Unit nF ns ns mJ mJ Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Test Conditions VR=600V IF = 200A VGE = 0V Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Min 600 Typ Max 250 500 Unit V A A di/dt =2200A/s mJ www.microsemi.com 2-6 APTGT200H60G - Rev 1 June, 2006 IF = 200A VR = 300V 200 1.6 1.5 130 225 9 19 2.3 4.7 2 V ns C APTGT200H60G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.24 0.4 175 125 100 5 3.5 280 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGT200H60G - Rev 1 June, 2006 APTGT200H60G Typical Performance Curve Output Characteristics (VGE =15V) Output Characteristics 400 350 300 IC (A) TJ=150C T J = 150C VGE=19V 400 350 300 IC (A) T J=25C TJ=125C 250 200 150 100 50 0 0 0.5 1 T J=25C 250 200 150 100 50 0 VGE =13V VGE=15V VGE=9V 1.5 VCE (V) 2 2.5 3 0 0.5 1 1.5 2 V CE (V) 2.5 3 3.5 400 350 300 Transfert Characteristics 14 T J=25C Energy losses vs Collector Current 12 10 E (mJ) 8 6 4 VCE = 300V VGE = 15V RG = 2 TJ = 150C Eoff 250 IC (A) 200 150 100 50 0 5 6 7 8 TJ=125C TJ=150C T J=25C Er 2 0 11 12 0 50 Eon 9 10 100 150 200 250 300 350 400 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance 16 VCE = 300V VGE =15V IC = 200A T J = 150C Reverse Bias Safe Operating Area 500 400 12 E (mJ) Eoff Eon 8 IF (A) 300 200 4 Eon Er 100 0 VGE =15V T J=150C RG=2 0 0 2 4 6 8 10 12 Gate Resistance (ohms) 14 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.25 Thermal Impedance (C/W) 0.2 0.15 0.1 0.05 0.9 0.7 IGBT 0.3 0.1 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4-6 APTGT200H60G - Rev 1 Single Pulse June, 2006 0.5 APTGT200H60G Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 120 100 80 60 40 20 0 0 50 100 150 IC (A) 200 250 Hard switching ZCS ZVS VCE=300V D=50% RG=2 TJ =150C Forward Characteristic of diode 400 350 300 250 IC (A) 200 150 100 50 0 0 0.4 0.8 1.2 1.6 V F (V) 2 2.4 TJ =125C T J=150C Tc=85C TJ =25C maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.45 Thermal Impedance (C/W) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.7 0.5 0.9 Diode 0.05 0 0.00001 Rectangular Pulse Duration in Seconds Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-6 APTGT200H60G - Rev 1 June, 2006 APTGT200H60G www.microsemi.com 6-6 APTGT200H60G - Rev 1 June, 2006 |
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